ECS Journal of Solid State Science and Technology 1(4), Q79 (2012), 2012
Closed-form, textbook-appropriate equations have been derived for the drain current I D , the cha... more Closed-form, textbook-appropriate equations have been derived for the drain current I D , the channel conductance g D , and the transconductance g m of high-k MOSFETs, incorporating high-k gate stack charges Q di,gsc , non-saturating inversion surface potential increase ϕ s,inv , and work-function difference φ MS . These ab initio relations, developed without imposing any assumptions, provide a clear view of the degrading effects of the high-k gate stack charges, the non-saturating inversion surface potential, and the semiconductor-metal work function difference on I D , g D , and g m . Rational estimates have been made of the latter which illustrate the relative weights of each of the three non-ideal factors in the degradation of the channel parameters of the high-k gate stack. The degradation appears to be most severe for the channel conductance, followed by the drain current, and then the trans-conductance. The work-function anomaly does not directly affect the trans-conductance for which the major degrading factor is the non-saturating surface potential. Even for moderate drain voltages, the numerical estimates reveal the drain current versus the drain voltage relation to become more non-linear in the case of the high-k gate stack. Comparison with the available experimental high-k gate stack data supports the import of these equations.
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