Michael Shur

Rensselaer Polytechnic Institute, Electrical, Computer and System Engineering, Faculty Member

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Engineer, physicist and entrepreuner

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Michael Shur co-Founder, Vice-President and Chief Technology Officer of Electronics of the Future, Inc.

Cyber security affects literally every computer user. A multibillion world-wide industry is tryin... more Cyber security affects literally every computer user. A multibillion world-wide industry is trying to solve this growing and very dangerous problem. And all these efforts are focused on fighting malicious software. However, the malicious hardware is even more of a threat and much harder to detect. Our company - Electronics of the Future, Inc. - has developed technology and a family of products to detect the malicious hardware. Electronics of the Future is using terahertz scanning technology and Artificial Intelligence to detect genuine and faked integrated circuits.

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Papers by Michael Shur

Semiconductor Device with Low-Conducting Buried And/Or Surface Layers

Lateral/Vertical Semiconductor Device

Ultraviolet Disinfection Case

Thermal, self-heating and kink effects in a-Si:H thin film transistors

International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217)

We report on self-heating, thermal and kink effects in a-Si TFTs. These effects become crucial fo... more We report on self-heating, thermal and kink effects in a-Si TFTs. These effects become crucial for gate lengths of 4 microns and shorter. Our data show that self-heating effects in TFTs might reduce the highest operating temperature for AMLC displays by up to 30 to 40°C for a 4 μm gate device and even more for shorter devices

Current collapse and reliability of III‐N heterostructure field effect transistors

physica status solidi (RRL) – Rapid Research Letters, 2007

Measurements of GaN HFET lifetime as a function of temperature show that different degradation me... more Measurements of GaN HFET lifetime as a function of temperature show that different degradation mechanisms are involved at low temperatures (close to room temperature) and high temperatures (above 150 °C). The degradation at low temperatures is linked to the trap generation and can be explained using the current collapse model. At higher tempe‐ ratures, other degradation mechanisms become important or even dominant. The current collapse related degradation can be diminished by using improved device design, which will greatly increase the overall lifetime (up to long lifetimes obtained by extrapolating high temperature data to room temperature). (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Two-channel AlGaN/GaN heterostructure field effect transistor for high power applications

Journal of Applied Physics, 1999

We report on a double-channel AlGaN/GaN heterostructure field-effect transistor (HFET) for high p... more We report on a double-channel AlGaN/GaN heterostructure field-effect transistor (HFET) for high power applications, where the bottom channel is formed by a GaN/AlGaN/GaN semiconductor–insulator–semiconductor structure. The band structure and the charge distribution are strongly influenced by the piezoelectric effect caused by the mismatch between AlGaN and GaN. This new design demonstrates that the current carrying capability of AlGaN/GaN HFETs can be enhanced using multichannel structures.

Sub-0.1 µm MOSFET modelling and circuit simulation

Electronics Letters, 1994

ABSTRACT

Field Effect Transistor with Gate Having Varying Sheet Resistance

Fabrication of semiconductor device having composite contact

Device and Circuit with Improved Linearity

Etching a nitride-based heterostructure

Characteristics of Amorphous Silicon Based Alloy Field Effect Transistors

MRS Proceedings, 1984

ABSTRACTWe have developed a new theory to describe the current-voltage characteristics of amorpho... more ABSTRACTWe have developed a new theory to describe the current-voltage characteristics of amorphous silicon based alloy field effect transistors. We show that the transition from below to above threshold operation occurs when the Fermi level in the accumulation region moves from the deep to tail localized states in the energy gap and that the field effect mobility is dependent on gate voltage. We also propose a new technique to determine the flat-band voltage from the I-V characteristics in the below threshold regime.

A 2015 perspective on the nature of the steady-state and transient electron transport within the wurtzite phases of gallium nitride, aluminum nitride, indium nitride, and zinc oxide: a critical and retrospective review

Journal of Materials Science: Materials in Electronics, 2015

ABSTRACT

Electron transport within a zinc-oxide-based two-dimensional electron gas: The impact of variations in the electron effective mass

MRS Proceedings, 2014

ABSTRACTWe examine the electron transport that occurs within a zinc-oxide-based two-dimensional e... more ABSTRACTWe examine the electron transport that occurs within a zinc-oxide-based two-dimensional electron gas using Monte Carlo simulations. The sensitivity of the results to variations in the lowest energy conduction band valley electron effective mass is examined. Increased values of the electron effective mass result in diminished electron drift velocities and reduced sensitivity to the free electron concentration. In agreement with our previous studies for a fixed value of the electron effective mass [11], we find that the reduced scattering due to the screening of the impurity and polar optical scattering leads to a slightly higher mobility of the 2DEG at low-fields but reduces the peak velocity, since gaining a higher energy due to the reduced polar optical phonon scattering enhances the effects of the non-parabolicity within this material.

Analysis of amorphous silicon thin-film transistors

Journal of Non-Crystalline Solids, 1987

ABSTRACT

Lateral modulation doping of two‐dimensional electron or hole gas

physica status solidi (b), 2012

We show that the two‐dimensional electron gas (2DEG) injected from the region with a higher conce... more We show that the two‐dimensional electron gas (2DEG) injected from the region with a higher concentration into the region with a lower concentration decays very slowly. In contrast to the three‐dimensional case, where the concentration is an exponential function of distance from the injecting contact, the 2D concentration is inversely proportional to this distance. Moreover, using passivation with a high dielectric constant or a floating metal gate placed close to the 2DEG (with separation smaller than the Bohr radius) could dramatically enhance the 2DEG concentration decay length. This effect enables lateral remote electron transfer in 2DEG, similar to remote doping in heterostructures, and can be used to optimize the electric field and/or electron concentration profile.

Negative photoconduction in fully fabricated InP based HEMTs

Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits CORNEL-97, 1997

We studied the photocurrents in InP-based HEMTs as a function of bias voltages and photon energy.... more We studied the photocurrents in InP-based HEMTs as a function of bias voltages and photon energy. The devices had excellent electrical characteristics. In the deep subthreshold regime the drain current stems from the gate current. In this region, the photo-drain-current also is caused by the photo-gate current, as evidenced by its magnitude and spectral characteristics. In the subthreshold regime, the photocurrent rises rapidly at a photoenergy of approximately 0.7 eV (which corresponds to the energy gap of the InGaAs channel). Spectral analysis indicates that the response stems from a multitude of transitions. In this regime, transitions to the first electron subband are dominating. When the device is strongly turned on, this dominance disappears. At small drain voltages (i.e. in the linear region) the photoconduction behavior is similar to that observed in GaAs based HEMTs. The transistor amplifies the photogenerated charge due to hole storage in the channel. In the saturation regime we observe a drastically different behavior: The photocurrent is negative. In this case, the drain current becomes smaller when the device is illuminated. We also observe a pronounced change in spectral response in this region. We explain this effect by storage of electrons rather than of holes

Semiconductor Device with Multiple Space-Charge Control Electrodes

Density of two-dimensional elel:-tron gas in modulation-doped structure with graded interface

Plasma wave FET for sub-wavelength THz imaging

2007 International Semiconductor Device Research Symposium, 2007

In this paper, the image of the transistor responsivity pattern is recorded as a dependence of th... more In this paper, the image of the transistor responsivity pattern is recorded as a dependence of the drain- to- source voltage, induced by the THz laser radiation versus the displacement of the transistor in perpendicular plane in respect to the laser beam. The micrometer scale and even nanometer scale resolution imaging can be achieved with the field effect transistor operating