Applied Materials

As AI accelerates demand for energy-efficient computing, the semiconductor industry must accelerate the pace of innovation. Applied Materials and NVIDIA are pioneering an end-to-end digital development model for chipmaking that combines Applied’s expertise in materials engineering and semiconductor manufacturing with NVIDIA CUDA-X libraries. This reflects the industry’s shift toward cross-ecosystem innovation—exemplified by initiatives like Applied’s EPIC platform—where progress increasingly comes from closer collaboration across the semiconductor value chain. 

At Applied Materials, we’re developing sustainable solutions that reduce our environmental footprint while advancing the technologies that shape our world. Since 2019, we’ve made progress—achieving an average 17% improvement in energy consumption per wafer pass across all semiconductor products, and reducing product-use emissions intensity by 31%, enabling more energy efficient computing. This is one of the ways we deliver material innovation that changes the world. Read more in our latest blog about how Applied is advancing sustainability: https://bit.ly/3RvEfvG #WeAreApplied #MakeItMaterial

Silicon Valley was built on bold ideas and breakthrough engineering, and Applied’s EPIC Center will bring that spirit into the future. It doesn’t hurt that within 50 miles of Applied is about 40% of the S&P 500! By uniting customers, partners and academia, we will accelerate the pace of innovation where it matters most: at the intersection of materials engineering and the AI era. #MakeItMaterial

From daily problem-solving to world-changing technology, every role has the power to make a difference. At Applied Materials, engineers like Lynda use AI to transform troubleshooting into a faster, data-driven process, helping teams solve challenges with greater speed and consistency. By scaling knowledge and improving productivity, we help advance the chips powering the next generation of technology. Be part of the future. Apply now. https://bit.ly/4wNyIj6

To meet the performance and energy demands of AI, the industry is rapidly shifting to advanced 3D architectures, including gate-all-around (GAA) transistors in advanced logic and deep channels in next-generation memory. As these designs evolve, features are becoming taller, narrower, and more complex. This makes controlling materials at the atomic scale a key bottleneck to continued scaling. Applied Materials addresses this challenge with Centris™ Spectral™ SiN ALD, purpose-built for the most demanding 3D architectures. Using a breakthrough microwave plasma technology, it creates SiN films that 🔹improve performance, 🔹improve power efficiency, and 🔹improve yield across logic and memory scaling. Learn more: https://bit.ly/4hfzUr1

The Six Five Summit: AI Unleashed 2026 is heating up! We are beyond excited to announce that Gary Dickerson, President and CEO of Applied Materials, will open Day 3 of the summit. Semiconductors are the foundation upon which the entire AI ecosystem is built, and nobody understands that better than Gary. From advanced chip manufacturing to AI-ready materials engineering, Gary will bring a perspective that goes straight to the heart of what makes enterprise AI possible at scale. Join us August 25-27 for 3 days of executive interviews exploring the technologies, strategies, and infrastructure shaping the future of AI. 🌐 100% virtual. Free to attend. Register today: https://lnkd.in/e-rSR9Nt

When Sony launched the first Walkman TPS‑L2 in 1979, it sparked a global shift toward personal, portable music. What’s less known is that this breakthrough relied on the miniaturized, low‑power semiconductor components made possible by advances in chip manufacturing innovations driven by equipment suppliers like Applied Materials, which by the late ’70s had become a key enabler of high‑yield thin‑film and semiconductor production technologies. Fun Fact: The original Walkman included two headphone jacks so friends could listen together, an unexpected social twist on the era’s first truly personal audio device.

As 3D NAND memory devices continue to add more layers, manufacturers face a growing problem: how do you precisely remove a target material deep within complex structures without damaging everything around it? That's the challenge we're addressing with the Producer Selectra Mo Etch system. Designed for advanced memory manufacturing, the platform enables highly selective removal of molybdenum (Mo) used in wordline separation for next-generation 3D NAND devices. By moving beyond the limitations of traditional wet etch processes, it delivers better control, improved uniformity, and greater repeatability within increasingly demanding high-aspect-ratio structures. The impact is significant. By improving the precision of material removal, manufacturers can achieve tighter profile control, better wafer-to-wafer consistency, reduced process variability, and more reliable scaling for future 3D NAND architectures. The technology also supports the transition away from legacy wet etch approaches, helping improve manufacturing performance while maintaining the precision required for increasingly complex device designs. The significance of this innovation goes beyond a single process step. As semiconductor devices become more complex, manufacturers need new ways to engineer materials with atomic-scale precision. The ability to selectively remove one material while preserving surrounding structures is quickly becoming a critical enabler of future memory and logic technologies. Producer Selectra Mo Etch represents an important shift from conventional approaches toward a new generation of selective processing technologies, helping chipmakers solve some of the industry's toughest patterning challenges as device architectures continue to evolve. Learn more: https://bit.ly/4pioZPl

As 3D NAND memory devices continue to add more layers, manufacturers face a growing problem: how do you precisely remove a target material deep within complex structures without damaging everything around it? That's the challenge we're addressing with the Producer Selectra Mo Etch system. Designed for advanced memory manufacturing, the platform enables highly selective removal of molybdenum (Mo) used in wordline separation for next-generation 3D NAND devices. By moving beyond the limitations of traditional wet etch processes, it delivers better control, improved uniformity, and greater repeatability within increasingly demanding high-aspect-ratio structures. The impact is significant. By improving the precision of material removal, manufacturers can achieve tighter profile control, better wafer-to-wafer consistency, reduced process variability, and more reliable scaling for future 3D NAND architectures. The technology also supports the transition away from legacy wet etch approaches, helping improve manufacturing performance while maintaining the precision required for increasingly complex device designs. The significance of this innovation goes beyond a single process step. As semiconductor devices become more complex, manufacturers need new ways to engineer materials with atomic-scale precision. The ability to selectively remove one material while preserving surrounding structures is quickly becoming a critical enabler of future memory and logic technologies. Producer Selectra Mo Etch represents an important shift from conventional approaches toward a new generation of selective processing technologies, helping chipmakers solve some of the industry's toughest patterning challenges as device architectures continue to evolve. Learn more: https://bit.ly/4pioZPl

The next wave of technology leadership will be defined by ecosystems, not individual companies. Applied Materials’ EPIC Center in Silicon Valley reflects this shift by creating a new model for collaboration and innovation where our customers and partners work side by side to solve the most complex challenges in semiconductor chip manufacturing. The work we do together advances the world’s technology. #MakeItMaterial