Research Interests and Professional History by Melanie Will-Cole -- Please note: Publications & Patents listed under M.W. Cole
Although my formal training resides in geophysics, geochemistry and oceanography, and my professi... more Although my formal training resides in geophysics, geochemistry and oceanography, and my professional career experience is focused in materials science the common thread of my expertise is "Materials". My training as a geoscientist has enabled me to cultivate a deep understanding of materials, whether natural occurring (geoscience) or artificial (material science)their formation, relationships between external variables such as temperature, pressure, and internal material composition and related properties. As a geoscientist -oceanographer I applied the basic principles of physics, chemistry and mathematics to the Earth, "A large Complex System". As a material scientist, focused on electronic materials physics, I applied this same set of skills in physics, chemistry and mathematics, however in this case the system is confined to "Laboratory-Scale Experiments" a notably more "Controlled System". My experience in studying complex geoscience systems to explore and unravel the petrogenesis of rock and rock bodies (i.e., South Atlantic and Indian Ocean basalts, and continental gabbros from the Adirondacks) has enabled me to investigate electronic materials from a non-traditional materials physics point of view. As such, my experimental materials research has often taken a different direction from that of a traditional materials scientist, and as a result has enabled me to put forward significant experimental creativity and innovation for developing a fundamental understanding of the complex connections among structure, process and property relationships in thin film electronic materials.
Papers by Melanie Will-Cole -- Please note: Publications & Patents listed under M.W. Cole
Applied Physics Letters, 1997
Proceedings of the 2005 Particle Accelerator Conference
Photoelectrons fiom an all niobium superconducting injector have been generated for the first tim... more Photoelectrons fiom an all niobium superconducting injector have been generated for the first time. QE of 2~1 0-~ at 266 nm and Z X~O-~ at 248 nm, maximum charge of 10 nC in 10 ns and chargelcycle of 0.8 nC were measured. The lower QE observed after laser cleaning, compared to the room temperature measurements, is attributed to the long distance between the cathode and the closest ion pump and the possibility of the laser ablated material adsorbed back onto the cathode surface at cryogenic temperature. No cavity quenching has been observed even at the maximum laser energy of 3 mJ, maximum repetition rate of 250 Hz and maximum charge of 10 nC fiom the cathode.
Public reporting burden for this collection of information is estimated to average 1 hour per res... more Public reporting burden for this collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing the collection information. Send comments regarding this burden estimate or any other aspect of this collection of information, including suggestions for reducing the burden, to Department of Defense, Washington Headquarters Services, Directorate for Information Operations and Reports (0704-0188),
The Materials Properties of a Nickel Based Composite Contact to n-Sic for Pulsed Power Switching
MRS Proceedings
ABSTRACTNovel Ni/WSi/Ti/Pt composite Ohmic contacts to n-SiC were investigated as a function of a... more ABSTRACTNovel Ni/WSi/Ti/Pt composite Ohmic contacts to n-SiC were investigated as a function of annealing temperatures up to 1000°C. The onset of Ohmic behavior occurred at annealing temperatures of 900°C. Annealing at temperatures between 950°and 1000°C yielded excellent Ohmic behavior. At these temperatures the contact-SiC interface was smooth, defect free and characterized by a narrow Ni2Si reaction region. The annealed contacts possessed atomically smooth surface morphologies and exhibited minimal contact expansion. The residual carbon, resultant from SiC decomposition, was constrained by reaction with the WSi and Ti metallization layers forming carbide phases of W and Ti. The locations of the carbide phases were spatially distant from the metal semiconductor interface. Our results demonstrate that the Ni/WSi/Ti/Pt composite Ohmic contact maintains the desirable electrical properties associated with Ni contacts and possess excellent interfacial, compositional and surface propert...
Magnetron reactive ion etching of GaAs in a BCl3 discharge
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
Magnetron reactive ion etching (MIE) of GaAs has been investigated using BClâ as the etch gas. Et... more Magnetron reactive ion etching (MIE) of GaAs has been investigated using BClâ as the etch gas. Etch rates are determined as a function of applied power density (0.16-0.80 W/cm²) and chamber pressure (2-6 mTorr). Patterned GaAs samples were etched anisotropically and exhibited smooth surfaces, with no indication of residues on surfaces or sidewalls. Transmission electron microscope measurements were performed to
Rapid Plan View Fabrication of Semiconductor Tem Samples for Interface Strain and Grain Size Analysis
MRS Proceedings
This study presents novel methods for chemically preparing back-side and double-side etched, plan... more This study presents novel methods for chemically preparing back-side and double-side etched, plan-view TEM samples without use of jet thinning instrumentation in order to examine both surfaces and interfaces. Examples are drawn from the semiconductor industry, but this technique can be generalized for use in most materials systems. The methodology for single-sided etching consists of flat lapping and mechanical dimpling followed by material selective chemical etching to electron transparency. Interface defect analysis of heterostructures is achieved via double-sided etching to electron transparency using the proper selective chemical etchants. These techniques are presented not as replacements for conventional cross-sectional preparatory techniques, but instead, as a means for rapid sample preparation for situations where a large number of samples must be analyzed quickly, or in cases where the necessary equipment is lacking for crosssection preparation.
Mater Res Bull, 1988
This book is intended as a text for a one-year graduate course in solid state physics. Unfortunat... more This book is intended as a text for a one-year graduate course in solid state physics. Unfortunately, it is inadequate for that task. It can, perhaps, serve as an occasionally useful reference to a few topics (e.g., group theory), for which it offers a more complete treatment than is conventionally found in such books.
Thin Film Compompositionally Stratified Multi-Layer Heterostructure for Temperature Insenstive Low Dielectric Loss and Enhanced Tunability Otm Comunications Devices and Menthods for Fabrication Thereof
The effects of cyclic thermal loading on n-type 4H-SiC device components for EM-gun pulsers
1998 Fourth International High Temperature Electronics Conference. HITEC (Cat. No.98EX145), 2000
This study developed and performed laboratory experiments which mimic the acute thermal cycling i... more This study developed and performed laboratory experiments which mimic the acute thermal cycling inflicted on device structures during high power switching for use in future EM-gun systems. Ni contacts to n-SiC were the device components selected for cyclic thermal testing. Modifications of the Ni-SiC materials properties in response to cyclic thermal fatigue were quantitatively assessed via Rutherford backscattering spectrometry (RBS),
Thin film compositionally stratified multi-layer heterostructure for temperature insensitive low dielectric loss and enhanced tunability OTM communications devices and methods for fabrication thereof
Thin Film Compositionally Stratified Multi-Layer Heterostructure for Temperature Insensitive Low Dielectric Loss and Enhanced Tunablity Otm Communications Devices and Methods for Fabrication Thereof
Methods for fabrication of thin film compositionally stratified multi-layer heterostructures for temperature insensitive low dielectric loss and enhanced tunability OTM communications devices
Process for nickel silicide Ohmic contacts to n-SiC
Paraelectric thin film semiconductor material and method for producing the same
Co@CoO@Au core-multi-shell nanocrystals
Journal of Materials Chemistry, 2010
Page 1. Co@CoO@Au core-multi-shell nanocrystals Stephanie H. Johnson,a Craig L. Johnson,a Steven ... more Page 1. Co@CoO@Au core-multi-shell nanocrystals Stephanie H. Johnson,a Craig L. Johnson,a Steven J. May,ac Samuel Hirsch,b MW Coleb and Jonathan E. Spaniera Received 21st September 2009, Accepted 27th October ...
Low defect density gallium nitride epilayer and method of preparing the same
Test apparatus and method for reliability assessment of high power switching devices
Formulation and fabrication of an improved Ni based composite Ohmic contact to n-SiC for high temperature and high power device applications
REE mobility due to alteration of Indian Ocean basalt
Can J Earth Sci, 1985
Indian Ocean basalts from DSDP site 249 on the Mozambique Ridge exhibit a progressive up-hole inc... more Indian Ocean basalts from DSDP site 249 on the Mozambique Ridge exhibit a progressive up-hole increase in alteration and Fe2O3/FeO and decrease in MgO and density over the approximately 3.5 m of recovered core. Abrupt increases in H2O+ and K2O and a decrease in CaO relative to lower basalt samples occur in the uppermost sample. These up-hole changes are accompanied by increasing REE and LREE/HREE and the development of a pronounced negative Ce anomaly. A rough estimate of the magnitude of chemical change is obtained by holding our most immobile element (Lu) constant.
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Research Interests and Professional History by Melanie Will-Cole -- Please note: Publications & Patents listed under M.W. Cole
Papers by Melanie Will-Cole -- Please note: Publications & Patents listed under M.W. Cole