Room temperature photoluminescence of Ge multiple quantum wells with Ge-rich barriers
Applied Physics Letters, 2011
We report on the observation of room temperature direct band gap photoluminescence in compressive... more We report on the observation of room temperature direct band gap photoluminescence in compressively strained-Ge multiple quantum wells with Ge-rich SiGe barriers. A detailed experimental study of the temperature dependence of the photoluminescence is carried out from 5 K up to room temperature. We find that the direct gap photoluminescence at room temperature is due to the thermal excitation of carriers from L-type to Gamma-type confined states. Room temperature photoluminescence shows that Ge/SiGe multiple quantum wells are promising candidates for efficient light emitting devices monolithically integrated on Si.
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Papers by Marco Guzzi